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Amorphous and Microcrystalline SiC as New Synthetic Wide Gap Semiconductors

Published online by Cambridge University Press:  25 February 2011

Y. Hamakawa  and
H. Okamoto
Y. Hamakawa
Affiliation:
Faculty of engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
H. Okamoto
Affiliation:
Faculty of engineering Science, Osaka University, Toyonaka, Osaka, Japan 560.
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Abstract

A review is given on recent progress in amorphous and microcrystalline silicon-carbide (a-SiC, nc-SiC) semiconductors and their technological applications to optoelectronic functional devices. Firstly, some significant properties in this alloy as a new synthetic material are pointed out with recent advances of thin film technologies, such as plasma CVD, ECR-CVD and ion-beam CVD etc. There exists an energy gap controllability from 1.7eV to 3.6 eV with retaining the valency electron control from n-type through i- to p-type semiconductors. While its conductivity can also be controlled more than ten order of magnitudes, e.g., from 10-9to 102 Scm-1 by controlling the impurity doping and preparation conditions.

Secondly, a series of technical data on the electronic and optoelectronic properties of a-Si, C1−x C1−x and μ-SiC are demonstrated from recent achievements. In the final part of the paper, current state of the art in the field of optoelectronic applications from live technologies on amorphous silicon solar cells. a-SiC visible light LED and EL devices are reviewed. A technological evolution from “microelectronics” to “macroelectronlcs” will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 242: Symposium G – Wide Band-Gap Semiconductors , 1992 , 651
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

[1] Hamakawa, Y. and Tawada, Y.: Int. J. Solar Energy, 1 (1982) 251.Google Scholar
[2] Tawada, Y., Kondo, M., Okamoto, H. and Hamakawa, Y.: Solar Energy Mat., 6 (1982) 299.Google Scholar
[3] Ovshinsky, S. R.: MRS 1985 Spring Meeting, San Francisco (1985) 251.Google Scholar
[4] Tsuda, S., Tatui, H., Matsuyama, T., Haku, H., Watanabe, K., Nakashima, Y., Nakano, S. and Ku-wano, Y.: Proc. 2nd Int. Photovoltaic Science and Engineering Conf., Beijing (1986) 409.Google Scholar
[5] for example, JARECT, ed. by Hamakawa, Y. (Ohm-Sha & North-Holland, Tokyo and Amsterdam, 1983) 6, p. 252.Google Scholar
[6] Snimizu, I.: J. Non-Cryst. Solids, 77478 (1985) 1363.Google Scholar
[7] Gunag-Pu, Wei, Okamoto, H. and Hamakawa, Y.: Jpn. J. Appl. Phys., 24 (1985) 1105.CrossRefGoogle Scholar
[8] Nakano, S., Fukatsu, T., Takeuc'i, M., Nakajima, S. and Kuwano, Y.: Proc. 3rd Sensor Symposium, Tsukuba(1983)97.Google Scholar
[9] Kruangam, D., Endo, T., Okamoto, H. and Hamakawa, Y.: Jpn. J. Appl. Phys., 24 (1985) L806.Google Scholar
[10] Hamakawa, Y., Kruangam, D., Yoyama, T., Yoshimi, M., Paasche, S.M. and Okamoto, H.: Int. J. Optoelectronics Devices and Technology. 4 (1989) 281.Google Scholar
[11] Hamakawa, Y., Toyama, T. and Okamoto, H.: Proc. 1st Int. Conf. on Amorphous Semiconductor Technology, Ashevill (1989) 180.Google Scholar
[12] Hamakawa, Y., Matsumoto, Y., Hirata, G. and Okamoto, H.: MRS Proc, 164 (1990) 291.Google Scholar
[13] Hamakawa, Y., Hattori, J. and Okamoto, H.: a-Si Solar Cell Contractors Meeting, Sunshine Project, MITI, May 8–10 (1990).Google Scholar
[14] Shirai, H., Das, D., Hanna, J. and Snimizu, I.: Tech. Digest of PVSEC-5, Kyoto (1990) 59.Google Scholar
[15] Tawada, Y. and Yamagishi, H.: a-Si Solar Cell Contractors Meeting, Sunshine Project, MITI, May 8–10 (1990).Google Scholar
[16] for example, Tsuda, S., Nakamura, N., Watanabe, K., Takahama, T., Nishiwaki, H., Ohnishi, M. and Kuwano, Y.: Solar Cells, 9 (1983) 25.Google Scholar
[17] Hamakawa, Y.: Proc. Euroforum - New Energy Congress -, 1, Saarbrucken (1988) 194.Google Scholar
[18] Nakata, Y., Sannomiya, H., Moriuchi, S., Inoue, Y., Komoto, K., Yokota, A., Itoh, M. and Tsuji, T.: Int. J. Optoelectronics Devices and Technology, 5 (1990) 209.Google Scholar
[19] Ma, W., Horiuchi, T., Yoshimi, M., Haltori, K., Okamoto, H. and Hamakawa, Y.: Proc. 22nd IEEE PVSC (tobe published).Google Scholar
[20] Kruangam, D., Deguchi, M., Toyama, T., Okamoto, H. and Hamakawa, Y.: IEEE Trans. Electron Devices, ED-35 (1988) 957.CrossRefGoogle Scholar
[21] Paasche, S., Toyama, T., Okamoto, H. and Hamakawa, Y.: IEEE Trans. Electron Devices, ED-36 (1989)2895.CrossRefGoogle Scholar
[22] Kruangam, D., Deguchi, M., Endo, T., Okamoto, H. and Hamakawa, Y.: Extended Abstracts of 18th Int. Conf. Solid State Devices and Materials, Tokyo (1986) 683.Google Scholar
[23] Snimizu, H., Yoshimi, M., Hattori, K., Okamoto, H. and Hamakawa, Y.: Proc. 14th ICAS, Garmisch- Parlenkrichen (1991) (to be published).Google Scholar