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Amorphization And Recrystallization Processes In Monocrystaline Beta Silicon Carbide Thin Films

  • J.A. Edmond (a1), S.P. Withrow (a2), H.S. Kong (a1) and R.F. Davis (a1)

Abstract

Individual, as well as multiple doses of 27Al+, 31p+, 28Si+, and 28Si+ plus 12C+ were implanted into (100) oriented monocrystallne β-SiC films+. A critical energy of =16 eV/atom required for the amorphization of β-SiC via implantation of Al and P was determined using the TRIM84 computer program for calculation of damage-energy profiles coupled with results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800°C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing; 1) precipitates and dislocation loops, 2) highly faulted, microtwinned regions, and 3) random crystallites were observed.

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Amorphization And Recrystallization Processes In Monocrystaline Beta Silicon Carbide Thin Films

  • J.A. Edmond (a1), S.P. Withrow (a2), H.S. Kong (a1) and R.F. Davis (a1)

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