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Amorphization And Recrystallization Processes In Monocrystaline Beta Silicon Carbide Thin Films

Published online by Cambridge University Press:  26 February 2011

J.A. Edmond ,
S.P. Withrow ,
H.S. Kong  and
R.F. Davis
J.A. Edmond
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695–7907
S.P. Withrow
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
H.S. Kong
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695–7907
R.F. Davis
Affiliation:
Department of Materials Engineering, North Carolina State University, Raleigh, NC 27695–7907
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Abstract

Individual, as well as multiple doses of 27Al+, 31p+, 28Si+, and 28Si+ plus 12C+ were implanted into (100) oriented monocrystallne β-SiC films+. A critical energy of =16 eV/atom required for the amorphization of β-SiC via implantation of Al and P was determined using the TRIM84 computer program for calculation of damage-energy profiles coupled with results of RBS/ion channeling analyses. In order to recrystallize amorphized layers created by the individual implantation of all four ion species, thermal annealing at 1600, 1700, or 1800°C was employed. Characterization of the recrystallized layers was performed using XTEM. Examples of SPE regrown layers containing; 1) precipitates and dislocation loops, 2) highly faulted, microtwinned regions, and 3) random crystallites were observed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 395
Copyright
Copyright © Materials Research Society 1985

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References

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