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Amorphization and Annealing of 6H SiC Implanted with N-Type, P-Type or Isovalent Dopants

Published online by Cambridge University Press:  21 February 2011

J. A. Spitznagel ,
Susan Wood ,
W. J. Choyke ,
R. P. Devaty  and
J. Ruan
J. A. Spitznagel
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Rd., Pittsburgh. PA 15234
Susan Wood
Affiliation:
Westinghouse Science & Technology Center, 1310 Beulah Rd., Pittsburgh. PA 15234
W. J. Choyke
Affiliation:
University of Pittsburgh. Department of Physics, Pittsburgh. Pittsburgh. PA 15260
R. P. Devaty
Affiliation:
University of Pittsburgh. Department of Physics, Pittsburgh. Pittsburgh. PA 15260
J. Ruan
Affiliation:
University of Pittsburgh. Department of Physics, Pittsburgh. Pittsburgh. PA 15260
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Abstract

lons of boron, phosphorous, titanium and neon were implanted into (0001) oriented 6H SiC crystals at 300 K. Implantation energies and fluences were chosen to produce equal (calculated) displacements per atom at similar peak damage depths and a randomized (metaminct or amorphous) zone extending to the front surface. RBS/channeling was used to test the amorphization criteria. Dopant effects on regrowth kinetics and microhardness have been determined by isochronal annealing.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 147: Symposium C – Ion Beam Processing of Advanced Electronic Materials , 1989 , 113
Copyright
Copyright © Materials Research Society 1989

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