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Boyd, G. D., Fox, A. M., Miller, D. A. B., Chirovsky, L. M. F., D'Asaro, L. A., Kuo, J. M., Kopf, R. F., and Lentine, A. L., “33ps Optical Switching of Symmetric Self Electro-optic Effect Devices” Appl. Phys. Lett., 57, 1843–1845 (1990).
Morgan, R. A., Freund, J. M., Chirovsky, L. M. F., D'Asaro, L. A., Kopf, R. F., and Kuo, J. M., “Improvements in Self Electro-optic Effect Devices using Reduced Barrier Multiple Quantum Wells” LEOS '90 Conference Digest, Paper OE8.2, p. 156 (1990).
Chirovsky, L. M. F., D'Asaro, L. A., Tu, C. W., Lentine, A. L., Boyd, G. D., and Miller, D. A. B., “Batch Fabricated Symmetric Self Electro-optic Effect Devices” Proc. on Photonic Switching, eds. Midwinter, J. E. and Hinton, H. S., vol. 3 (Optical Society of America, Washington, D.C., 1989) p. 2–6.
Swaminathan, V., Freund, J. M., Chirovsky, L. M. F., Harris, T. D., Kuebler, N. A., and D'Asaro, L. A., “Evidence for Surface Recombination at Mesa Sidewalls of Self Electro-optic Effect Devices” J. Appl. Phys., 68, 4116–4118 (1990).
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Luther, L. C. unpublished. From Hall measurements on single layers of n- or p-type (n,p ∼1015 -1016 cm−3) GaAs and AlxGa1−xAs (x ∼ 0.1 – 0.3), the room temperature electron and hole mobilities are determined to be ∼ 2000 cm2 V−1 sec−1 and ∼ 200 cm2 V−1 sec−1, respectively.
 For the low barrier structure we did not observe the dependence of τa on mesa size due to recombination at mesa sidewalls as we did for the standard and thin barrier structure. We believe that this is perhaps fortuitous and not caused by the change in the MQW structure.
 A similar conclusion was reached independently by optical measurements on thin and low barrier devices. R.A. Morgan, private communication.