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Aluminum Nitride Thin Films for Microwave Filter and Microsystem Applications

Published online by Cambridge University Press:  15 February 2011

M.-A. Dubois ,
P. Muralt  and
L. Sagalowicz
M.-A. Dubois
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 105 Lausanne, Switzerland
P. Muralt
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 105 Lausanne, Switzerland
L. Sagalowicz
Affiliation:
Ceramics Laboratory, Materials Department, EPFL Swiss Federal Institute of Technology, CH- 105 Lausanne, Switzerland
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Abstract

Results on growth, characterization and resonator applications of AIN thin films grown by pulsed dc reactive magnetron sputtering are presented. In order to allow deposition on electrode films, moderate deposition temperatures of 300 to 400 °C were applied. On (001) sapphire, monocrystalline films were obtained. On (111)-textured platinum films, a columnar and (001) textured microstructure was established which exhibited quasi single-crystal properties in relevant materials constants, such as e33, e31, and c33. The films have been successfully applied in bulk wave resonators operating at GHz frequencies, allowing for the derivation of acoustic parameters. A zero thermal frequency drift was obtained with a membrane resonator due to a SiO2 layer as compensating element.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 604: Symposium LL – Materials for Smart Systems III , 1999 , 9
Copyright
Copyright © Materials Research Society 2000

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