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AlN Films Deposited by LP-MOCVD Atomic Layer Deposition at Lower Temperatures Using DMEAA and Ammonia

Published online by Cambridge University Press:  21 February 2011

J.N. Kidder Jr. ,
J. S. Kuo ,
T.P. Pearsall  and
J.W. Rogers Jr.
J.N. Kidder Jr.
Affiliation:
Department of Materials Science and Eng., University of Washington, Seattle, WA 98195
J. S. Kuo
Affiliation:
Department of Chemical Engineering, University of Washington, Seattle, WA 98195
T.P. Pearsall
Affiliation:
Department of Materials Science and Eng., University of Washington, Seattle, WA 98195
J.W. Rogers Jr.
Affiliation:
Department of Chemical Engineering, University of Washington, Seattle, WA 98195
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Abstract

We have investigated the deposition of AlN thin films on Si(100), Al2O3(0001), and Al2O3(0112) substrates at lower temperatures (523–723 K) using a novel aluminum source, dimethylethylamine:alane (DMEAA), with ammonia as a nitrogen source in a low-pressure MOCVD atomic layer growth process. At reactor pressures of 25 and 50 Torr a four-step sequence of reactant flow steps separated by flush steps was cycled. We observed a tendency toward a self-limiting growth rate as the DMEAA step flow time was increased. The deposition uniformity was observed to be dependent on temperature and non-uniform deposition occurred at higher temperatures. The microstructure and crystalline orientation were examined using x-ray diffraction and crystalline A1N films were deposited at temperatures as low as 573 K. Crystallite size decreased with substrate temperature and at 523 K. amorphous films were deposited. At T > 650 K preferentially oriented crystalline films were deposited with orientations of Si(100)//AIN(0001), Al2O3(0001)//AIN(0001), Al2O3(0112)//AIN(11 20).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 249
Copyright
Copyright © Materials Research Society 1996

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References

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