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Al Photodeposition and Light-Induced Nucleation on p-Type Si from TMA

Published online by Cambridge University Press:  25 February 2011

J.E. Bouree ,
J. Flicstein ,
J.F. Bresse ,
J.F. Rokmeluere  and
A.M. Pougnet
J.E. Bouree
Affiliation:
CNRS, Laboratoire de Physique des Solides, 92195 MEUDON, France
J. Flicstein
Affiliation:
CNET, Laboratoire de Bagneux, 92220 BAGNEUX, France
J.F. Bresse
Affiliation:
CNET, Laboratoire de Bagneux, 92220 BAGNEUX, France
J.F. Rokmeluere
Affiliation:
CNRS, Laboratoire de Physique des Solides, 92195 MEUDON, France
A.M. Pougnet
Affiliation:
CNET, Laboratoire de Bagneux, 92220 BAGNEUX, France
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Abstract

Photodecomposition of trimethylaluminum (TMA) flowing with H2 on p-type Si under UV irradiation is shown to be exclusively a reaction confined to surface species. Thus photonucleation and photodeposition of Al on Si is controlled either by Si-H or Si-O and Si-OH bonds. In the regions where Si-O and Si-OH are present, Al-O forms, which inhibits Al deposition either directly or via the adsorption of C containing photoproducts. In the other regions where Si is H terminated, it is assumed that H2 adsorbs dissociatively on Al clusters, thus leading to the formation followed by the desorption of methane from the adsorbed phase. For this reason, Al thin films are C contamination free.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 129: Symposium B – Laser and Particle-Beam Modification of Chemical Processes on Surfaces , 1988 , 251
Copyright
Copyright © Materials Research Society 1989

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References

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