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Al / Al-N / Ain Compositional Gradient Film Synthesized by Ion-Beam Assisted Deposition Method

Published online by Cambridge University Press:  03 September 2012

Yoshiki Amamoto ,
Shingo Uchiyama ,
Yoshihisa Watanabe  and
Yoshikazu Nakamura
Yoshiki Amamoto
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Hashirimizu 1–10–20, Yokosuka, Kanagawa 239, Japan
Shingo Uchiyama
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Hashirimizu 1–10–20, Yokosuka, Kanagawa 239, Japan
Yoshihisa Watanabe
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Hashirimizu 1–10–20, Yokosuka, Kanagawa 239, Japan
Yoshikazu Nakamura
Affiliation:
Department of Materials Science and Engineering, National Defense Academy, Hashirimizu 1–10–20, Yokosuka, Kanagawa 239, Japan
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Abstract

Al / AI-N / AIN compositional gradient thin film was deposited on a Si(100) substrate at room temperature by ion-beam assisted deposition method, with a diminishing ion beam current from 1.4 to 0 mA at increments of 0.3 mA in order to gradually decrease the nitrogen to aluminum ratio at the substrate. The gradual Al and AIN variation in composition was shown by the change of the Al / N atomic ratio analysed by the energy dispersive X-ray spectroscopy(EDX) and the X-ray photoelectron spectroscopy (XPS) in the cross section of the film. The formation of crystalline Al metal and AIN ceramic layer on the Si substrate was revealed by X-ray diffraction(XRD). The cross sectional image taken by high resolution transmission electron microscope (HRTEM) showed a nano-sized crystalline AI-N ceramic material and the flat interface between the Si substrate and the AIN film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 645
Copyright
Copyright © Materials Research Society 1997

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