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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

  • Yu. V. Melnik (a1) (a2), A. E. Nikolaev (a1), S. I. Stepanov (a1), A. S. Zubrilov (a1), I. P. Nikitina (a1), K. V. Vassilevski (a1) (a3), D. V. Tsvetkov (a1), A. I. Babanin (a1), Yu. G. Musikhin (a1), V. V. Tretyakov (a1) and V. A. Dmitriev (a1) (a3) (a4)...

Abstract

GaN, AIN and AIGaN layers were grown by hydride vapor phase epitaxy. 6H-SiC wafers were used as substrates. Properties of AIN/GaN and AIGaN/GaN structures were investigated. AIGaN growth rate was about 1 μm/min. The thickness of the AIGaN layers ranged from 0.5 to 5 μm. The AIN concentration in AIGaN layers was varied from 9 to 67 mol. %. Samples were characterised by electron beam micro analysis, Auger electron spectroscopy, X-ray diffraction and cathodoluminescence.

Electrical measurements performed on AIGaN/GaN/SiC samples indicated that undoped AIGaN layers are conducting at least up to 50 mol. % of AIN.

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AIN/GaN and AIGaN/GaN Heterostructures Grown by HVPE on SiC Substrates

  • Yu. V. Melnik (a1) (a2), A. E. Nikolaev (a1), S. I. Stepanov (a1), A. S. Zubrilov (a1), I. P. Nikitina (a1), K. V. Vassilevski (a1) (a3), D. V. Tsvetkov (a1), A. I. Babanin (a1), Yu. G. Musikhin (a1), V. V. Tretyakov (a1) and V. A. Dmitriev (a1) (a3) (a4)...

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