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AgSbSe2 thin films for photovoltaic structures produced through reaction of chemically deposited selenium thin films with Ag and Sb2S3

Published online by Cambridge University Press:  01 February 2011

K. Bindu ,
M. T. S. Nair  and
P. K. Nair
K. Bindu
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos -62580, Méxicobk@cie.unam.mx; pkn@cie.unam.mx
M. T. S. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos -62580, Méxicobk@cie.unam.mx; pkn@cie.unam.mx
P. K. Nair
Affiliation:
Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos -62580, Méxicobk@cie.unam.mx; pkn@cie.unam.mx
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Abstract

Selenium thin films (350 nm) deposited from a 0.01 M solution of Na2SeSO3 of pH 4.5 maintained at 10 °C for 13 h, have been used as a source of selenium vapour for reaction with vacuum deposited Ag thin film on chemically deposited Sb2S3+Ag layers. When a stack of Sb2S3+Ag is heated in contact with Se film, AgSbSe2 is formed through solid state reaction of Sb2S3 and Ag2Se. The latter is formed at 80°C through the reaction of Ag-film in Se-vapour. This thin film is photoconductive and p-type. The optical band gap is nearly 1 eV and dark conductivity, 10-3 Ω-1cm-1. This thin film has been incorporated to form a photovoltaic structure, SnO2:F-(n)CdS:In-(i)Sb2S3-(p)AgSbSe2-silver print. Voc> 400 mV and Jsc>12 mA/cm2 have been observed in this under an illumination intensity of 1 kWm-2.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 836: Symposium L – Materials for Photovoltaics , 2004 , L5.38
Copyright
Copyright © Materials Research Society 2005

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References

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