The growth of CuCl/CaF2 heterostructures has been studied with an atomic force microscope (AFM). We have grown by molecular beam epitaxy (MBE) CuCl thin films at various substrate temperatures and thicknesses on CaF2(111) substrates. AFM studies reveal that islanding is the dominant growth mechanism. We calculated the height-height correlation function, 〈lh(qt)|2〉, for each of our films and compared them to the predictions made by the Shadowing Growth Theory, a preexisting growth model that enabled us to extract the important kinetic parameter of surface diffusion length for the growth condition of each of the four films.
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