Hostname: page-component-76fb5796d-5g6vh Total loading time: 0 Render date: 2024-04-26T08:37:47.068Z Has data issue: false hasContentIssue false

Afm Studies of Surface Roughness of Borophosphosilicate Glass (BPSG) Films and Their Impact on Defect Detection Capability for Sub Micron Vlsi Technology

Published online by Cambridge University Press:  25 February 2011

H. Rojhantalab
Affiliation:
Intel Corporation, 3585 S.W. 198th Ave., Aloha, OR, 97124
M. Moinpour
Affiliation:
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA., 95052
N. Peter
Affiliation:
Intel Corporation, 3585 S.W. 198th Ave., Aloha, OR, 97124
M.L.A. Dass
Affiliation:
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA., 95052
W. Hough
Affiliation:
Intel Corporation, 3585 S.W. 198th Ave., Aloha, OR, 97124
R. Natter
Affiliation:
Intel Corporation, 3585 S.W. 198th Ave., Aloha, OR, 97124
F. Moghadam
Affiliation:
Intel Corporation, 2200 Mission College Blvd., Santa Clara, CA., 95052
Get access

Abstract

Chemically vapor deposited borophosphosilicate glass (BPSG) has been widely used in microelectronic device fabrication as interlayer dielectric film due to its excellent planarization, gettering and flow properties. With device geometry reducing to sub micron levels, there is an increasingly greater emphasis on detection and elimination of sub micron defects particularly on deposited film. In this paper, we report on the evaluation and characterization of the surface roughness of BPSG films of various thicknesses and film compositions deposited on Si substrates using the Atomic Force Microscopy (AFM). The effects of high temperature densification process on the surface roughness are presented. The defect detection capabilities of conventional laser-based particle counters with respect to the surface roughness of BPSG films are investigated.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Tullis, B.J., Microcontamination, Vol. 4, part 1, pp. 8694, 1986 Google Scholar
2. Locke, B.R. and Donovan, R.P., J. Electrochem. Soc., Vol. 134, No. 7, pp. 17631771, 1987 Google Scholar
3. Allen, J. and Duty, C., Microcontamination, Vol. 9, No. 5, pp. 2730, 1991 Google Scholar
4. Hough, W., Linn, L. and Ford, K., Intel Internal Report, Jan. 1992 Google Scholar
5. Larson, C.T. and Arsenault, S., Proc. of Microcontamination Conf, pp. 1425, 1992 Google Scholar
6. Ahmed, K. and Geisert, C., J. Vac. Sci. Technol., Vol. 10, No. 2, pp. 313315, 1992 Google Scholar
7. Iyer, S., Rojhantalab, H., Flores, D. and Sandoval, J., Intel Internal Report, Aug. 1992 Google Scholar
8. Yano, K. et al., Ext. Abst. Intl. Conf. on Solid State Devices and Matls., pp. 105107, 1992 Google Scholar