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Aes and Xps Studies of Sulfur-Treated ALxGA1−xas Surfaces

  • Hirotaka Ohno (a1), Hidenori Kawanishi (a1), Yoshiro Akagi (a1), Masayoshi Koba (a1) and Toshiki Hijikata (a1)...

Abstract

Passivation of AlxGa1−xAs surfaces by ammonium sulfide treatment has been investigated. Enhancement of photoluminescence intensity and dramatic reduction of oxide peaks in spectra acquired by X-ray photoelectron spectroscopy on AlxGa1−x.As surfaces prepared by this treatment lead to the reduction of surface state density. It was found that sulfur atoms were mainly bonded to Al atoms in an Al-enriched specimen of AlxGa1−xAs(x=0.78). The surface compositions of Al-enriched specimen(x=0.43, 0.78) were also found to be As-rich as a result of both sulfur treatment and the preferential etching of metallic atoms by an acidic solution, which prevents the initial oxidation of the surface of A1xGa1−xAs.

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[1] Spicer, W.E., Chye, P.W., Garner, C.M., Lindau, I. and Pianetta, P., Surf. Sci. 86, 763 (1973).
[2] ilson, R.J., Williams, J.S., Leamy, H.J., Miller, B., Casey, H.C. Jr., Parkinson, B.A. and Heller, A., Appl. Phys. Lett. 36, 76 (1980).
[3] Sandroff, C.J., Nottenburg, R.N., BichoTf, J.C. and Bhat, R., Appl. Phys. Lett. 51, 33 (1987).
[4] Carpenter, M.S., Melloch, M.R., Lundstrom, M.S. and Tobin, S.P., Appl. Phys. Lett. 52, 2157 (1988).
[5] Le, H.H., Racicot, R.J. and Lee, S.H., Appl. Phys. Lett., 54, 724(1989).
[6] Offsey, S.D., Woodall, J.M., Warren, A.C., Kirchner, P.D., Chappell, T.T. and Pettit, G.D., Appl. Phys. Lett. 48, 475 (1986).
[7] Sawada, T., Hasegawa, H. and Oho, H., Jpn. J. Appl. Phys. 26,L1871(1987).
[8] Oigawa, H., Fan, J. and Nannichi, Y., Jpn. J. Appl. Phys. 287 L525(1989).
[9] Fan, J., Oigawa, H. and Nannichi, Y., Jpn. J. Appl. Phys. 21, L1331(1988).
[10] Nannichi, Y., Fan, J., Oigawa, H. and Koma, A., Jpn. J.Appl. Phys, 27, L2367 (1988).
[11] Oigawa, H., Fan, J., Nannichi, Y., Ando, K., Saiki, K. and Koma, A., Jpn. J. Appl. Phys. 28, L340 (1989).
[12] Kawanishi, H. Ohno, H., Morimoto, T., Kaneiwa, S., Miyauchi, N., Hayashi, H., Akagi, Y., Nakajima, Y. and Hijikata, T. in Extended Abstracts of the 21st Conference on Solid State Devices and Materials, Tokyo, 1989 (Business Center for Academic Societies Japan, Tokyo, 1989), p. 337.
[13] Briggs, D. and Seah, M.P., Practical Surface Analysis by Auger and X-ray Photoelectron Spectroscopy, ed. (Wiley, Chichester, 1983). Chap. 5, p. 186.
[14] Somorjai, G.A., Chemistry in Two Dimensions (Cornell University Press, Ithaca, 1981) Surtaces, Chap. 1, p. 41.
[15] Cowans, B.A., Dardas, Z., Delgass, W.N., Carpenter, M.S. and Melloch, M.R., Appl. Phys. Lett. 54, 365, (1989).
[16] Sandroff, C.J., Hedge, M.S., Farrow, L.A., Chang, C.C. and Harbison, J.P., Appl. Phys. Lett. 54, 362 (1989).
[17] Shirley, D.A., Phys Rev. B 5, 4709 (1972).

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