Hostname: page-component-7479d7b7d-pfhbr Total loading time: 0 Render date: 2024-07-12T10:02:38.200Z Has data issue: false hasContentIssue false
  • English
  • Français

Adsorption of Oxygen in Laser-Induced Amorphous Silicon

Published online by Cambridge University Press:  15 February 2011

Yung S. Liu ,
S. W. Chiang  and
F. Bacon
Yung S. Liu
Affiliation:
General Electric Research and Development Center, Schenectady, New York, 12301USA
S. W. Chiang
Affiliation:
General Electric Research and Development Center, Schenectady, New York, 12301USA
F. Bacon
Affiliation:
General Electric Research and Development Center, Schenectady, New York, 12301USA
Get access

Abstract

Amorphous silicon has been produced on a single crystalline silicon surface by intense UV laser radiation at 266 nm followed by rapid quenching. In addition, formation of oxide of several tens of nanometers has been observed when irradiation takes place in air or in O2 ambient. Various experimental techniques including Transmission Electron Microscopy (TEM), sputtered Auger Electron Spectroscopy (AES), and differential Fourier-transform IR spectroscopy (FT-IR) have been employed to study adsorption of oxygen during rapid melting and resolidification process. The present results suggest a new processing technique for forming thin oxide film, namely, “Laser-induced oxidation.”

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1: Symposium – Laser and Electron-Beam Solid Interactions in Materials Processing , 1980 , 117
Copyright
Copyright © Materials Research Society 1981

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Mazzoldi, P., Della Mea, G., Battoglin, G., Servidorin, A., Bacci, D. and Jannitti, E., Phy. Rev. Lett. 44, 88 (1980).Google Scholar
2. Tsu, R., Hodgson, R. T., Tan, T. Y. and Baglin, J. E., Phys. Rev. Letts. 42, 1357 (1979).CrossRefGoogle Scholar
3. Liu, P. L., Yen, R., Bloembergen, N. and Hodgson, R. T., Appl. Phys. Letts. 34, 864 (1979).Google Scholar
4. Liu, Y. S., Jones, W. B. and Chernoch, J. P., Appl. Phys. Letts. 29, 32 (1976).Google Scholar
5. Adams, A. C., Smith, T. E. and Chang, C. C., J. Elect. Soc., 127, 1787 (1980).Google Scholar
6. Pliskin, W. A., in Proc. of “The Second International Symposium on Silicon Materials, 1973,” Ed. by Huff, H. R. and Burgess, R. R.. The Electrochemical Society, Inc., Princeton, New Jersey, p. 506, 1973.Google Scholar
7. Kaiser, W., Keck, P. H. and Lange, C. F., Phy. Rev. 101, 1264 (1955).Google Scholar
8. Spaepen, F. and Turnbull, D., “Proc. of Laser-Solid Interactions and Laser Processing–1978,” Ed. by Ferris, S. D., Leamy, H. J. and Poate, J. M., American Institute of Physics, NY, p. 73 (1979).Google Scholar
9. Kennedy, E. F., Csepregi, L., Mayer, J. W. and Sigmon, T. W., J. Appl. Phys. 48, 4241 (1977).Google Scholar
10. Hess, L. D., Roth, J. A., Olson, G. L., Dunlap, H. L., Von Allmen, M. and Peng, J., Proc. of “Laser and Electron Beam Processing of Materials,” Ed. by White, C. W. and Peercy, P. S., Academic Press, NY, p. 562 (1980).Google Scholar