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Adhesion of Nanoscale Metal Clusters to Semiconductor Surfaces: A Scanning Tunneling Microscopy Examination

  • SHIHCHER T. LIN (a1) and R. P. ANDRES (a1)

Abstract

Scanning tunneling Microscopy (STM) is used to investigate the initial stage of metal overlayer formation on semiconductor surfaces. STM scans are presented of preformed nanometer diameter Au clusters deposited at room temperature on molybdenum disulfide and hydrogen terminated silicon substrates. These scans show that the Au clusters are substantially deformed by interfacial forces between the cluster and substrate. The extent of deformation depends on the substrate.

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Adhesion of Nanoscale Metal Clusters to Semiconductor Surfaces: A Scanning Tunneling Microscopy Examination

  • SHIHCHER T. LIN (a1) and R. P. ANDRES (a1)

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