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Active Flexible Strain Sensor Based on Single ZnO Micro/Nanowire

Published online by Cambridge University Press:  18 June 2013

Pei Lin ,
Yan Cui ,
Xiaoqin Yan ,
Zheng Zhang ,
Peng Wang  and
Yue Zhang
Pei Lin
Affiliation:
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China.
Yan Cui
Affiliation:
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China.
Xiaoqin Yan
Affiliation:
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China.
Zheng Zhang*
Affiliation:
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China.
Peng Wang
Affiliation:
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China.
Yue Zhang*
Affiliation:
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China. Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, People’s Republic of China.
*
*Email: yuezhang@ustb.edu.cn
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Abstract

A facile and cost-effective fabrication approach of active strain sensor based on individual ZnO micro/nanowire was demonstrated. By connecting a ZnO micro/nanowire along polar growth direction with two Ag electrodes on flexible polystyrene (PS) substrate, the fabricated strain sensor was obtained as a typical M-S-M structure. The I-V characteristic of the device was highly sensitive to the strain caused by the obvious change of Schottky barrier height (SBH). Furthermore, both of the symmetric and asymmetric changes of the SBH at the source and drain were observed during device testing process. The respective contribution of piezoresistance effect and the piezoelectric effect to the change of SBHs were also systematically investigated.

Keywords

nanoscalesemiconductingsensor
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1556: Symposium W – Piezoelectric Nanogenerators and Piezotronics , 2013 , mrss13-1556-w10-05
Copyright
Copyright © Materials Research Society 2013 

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References

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