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Activation Energy for the C49-TO-C54 Phase Transition of Polycrystalline TiSi2 Films with under 30nm Thickness

Published online by Cambridge University Press:  21 February 2011

Y. Matsubara ,
K. Noguchi  and
K. Okumura
Y. Matsubara
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
K. Noguchi
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
K. Okumura
Affiliation:
ULSI Device Development Laboratories, NEC Corporation, 1120 Shimokuzawa, Sagamihara, Kanagawa 229, Japan
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Abstract

The C49–to–C54 transition in TiSi2 was investigated by resistance measurement and x-ray diffraction technique. The resistance measurement showed that the C49–to–C54 transition has an activation energy strongly dependent on the titanium thickness. The energy increased with the thinning of the TiSi2, from 4.6±0.3 eV for TiSi2 formed with 50nm titanium, to 10.5±0.3 eV formed with 20nm titanium. Furthermore, x-ray diffraction result showed that (004)-oriented phase in C54 TiSi2 is responsible for the increase in activation energy. This orientation dependence of the activation energy probably originates from anisotropy in C54 crystal growth during the transition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 311: Symposium O – Phase Transformations in Thin Films–Thermodynamics and Kinetics , 1993 , 263
Copyright
Copyright © Materials Research Society 1993

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References

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