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Activation Characteristics of Donor and Acceptor Implants in GaN

Published online by Cambridge University Press:  10 February 2011

X. A. Cao ,
S. J. Pearton ,
R. K. Singh ,
R. G. Wilson ,
J. A. Sekhar ,
J. C. Zolper ,
J. Han ,
D. J. Rieger ,
R. J. Shul  and
H. J. Guo
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X. A. Cao
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
S. J. Pearton
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
R. K. Singh
Affiliation:
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611, USA
R. G. Wilson
Affiliation:
Consultant, Stevenson Ranch, CA 91381, USA
J. A. Sekhar
Affiliation:
Micropyretics Heaters International, Inc. Cincinnati, OH 45215, USA
J. C. Zolper
Affiliation:
Office of Naval Research, Arlington, VA 22217, USA
J. Han
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
D. J. Rieger
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
R. J. Shul
Affiliation:
Sandia National Laboratories, Albuquerque, NM 87185, USA
H. J. Guo
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 3783 l,USA
S. J. Pennycook
Affiliation:
Oak Ridge National Laboratory, Solid State Division, Oak Ridge, TN 3783 l,USA
J. M. Zavada
Affiliation:
European Research Office, USARDSG, London, England
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Abstract

The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400 °C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5×1015 cm−2) a high concentration of extended defects remains after 1100 °C anneals, but higher temperatures (1400 °C) produces a significant improvement in crystalline quality in the implanted region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 572: Symposium Y – Wide-Bandgap Semiconductors for High-Power, High Frequency… , 1999 , 513
Copyright
Copyright © Materials Research Society 1999

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References

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