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Activation Characteristics of Donor and Acceptor Implants in GaN

  • X. A. Cao (a1), S. J. Pearton (a1), R. K. Singh (a1), R. G. Wilson (a2), J. A. Sekhar (a3), J. C. Zolper (a4), J. Han (a5), D. J. Rieger (a5), R. J. Shul (a5), H. J. Guo (a6), S. J. Pennycook (a6) and J. M. Zavada (a7)...

Abstract

The ionization levels of different donor and acceptor species implanted into GaN were measured by temperature-dependent Hall data after high temperature (1400 °C) annealing. The values obtained were 28 meV (Si), 48 meV (S), 50 meV (Te) for the donors, and 170 meV for Mg acceptor. P-type conductivity was not achieved with either Be or C implantation. Basically all of the implanted species show no distribution during activation annealing. For high implant doses (5×1015 cm−2) a high concentration of extended defects remains after 1100 °C anneals, but higher temperatures (1400 °C) produces a significant improvement in crystalline quality in the implanted region.

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Activation Characteristics of Donor and Acceptor Implants in GaN

  • X. A. Cao (a1), S. J. Pearton (a1), R. K. Singh (a1), R. G. Wilson (a2), J. A. Sekhar (a3), J. C. Zolper (a4), J. Han (a5), D. J. Rieger (a5), R. J. Shul (a5), H. J. Guo (a6), S. J. Pennycook (a6) and J. M. Zavada (a7)...

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