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Accurately Determining the Composition and Thickness of Layers in a GaAs/Ingaas Superlattice

Published online by Cambridge University Press:  21 February 2011

K.A. Jones ,
M.W. Cole ,
J.R. Flemish ,
R.L. Pfeffer ,
P. Cooke  and
H. Shen
K.A. Jones
Affiliation:
Army Research Lab, Fort Monmouth, NJ 07703
M.W. Cole
Affiliation:
Army Research Lab, Fort Monmouth, NJ 07703
J.R. Flemish
Affiliation:
Army Research Lab, Fort Monmouth, NJ 07703
R.L. Pfeffer
Affiliation:
Army Research Lab, Fort Monmouth, NJ 07703
P. Cooke
Affiliation:
GEO Centers, Inc., Lake Hopatcong, NJ 07849
H. Shen
Affiliation:
GEO Centers, Inc., Lake Hopatcong, NJ 07849
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Abstract

The layer thicknesses and composition of MBE grown 4 period 2 00A/100A GaAs/InGaAs superlattice structures with nominal indium concentrations of 10, 15 and 20% were determined by TEM, RBS, DXRD, PR and PL. The results show that the indium concentration obtained by DXRD is low and that obtained by PR and PL is high, and that the discrepancies are larger for the larger indium concentrations. We show that both descrepancies can be accounted for by relaxation of the lattice; elastic relaxation as represented by a radius of curvature, and/or plastic deformation as represented by mismatch dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 326: Symposium M – Growth, Processing, and Characterization of Semiconductor Heterostructures , 1993 , 79
Copyright
Copyright © Materials Research Society 1994

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References

1 Sakamoto, T., Funabashi, H., Ohta, K., Nakagawa, T., Kawai, N., and Kojima, T., Jpn. J. Appl. Phys. 23, L657 (1984).Google Scholar
2 Sperious, V.S. and Vreeland, T., J. Appl. Phys. 56., 1591 (1984).Google Scholar
3 Bastard, G. and Brum, J.A., IEEE J. Quantum Electron. 22., 1625 (1986)Google Scholar
4 Chu, S.N. G., Macrander, A.T., Strege, K.E. and Johnston, W.D. Jr., J. Appl. Phys. 57, 249 (1985).Google Scholar
5 Chen, Y.C. and Bhattacharya, P., J. Appl. Phys. 73, 7389 (1993).Google Scholar
6 Matthews, J.M. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974) .Google Scholar