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Accurately Determining the Composition and Thickness of Layers in a GaAs/Ingaas Superlattice

  • K.A. Jones (a1), M.W. Cole (a1), J.R. Flemish (a1), R.L. Pfeffer (a1), P. Cooke (a2) and H. Shen (a2)...

Abstract

The layer thicknesses and composition of MBE grown 4 period 2 00A/100A GaAs/InGaAs superlattice structures with nominal indium concentrations of 10, 15 and 20% were determined by TEM, RBS, DXRD, PR and PL. The results show that the indium concentration obtained by DXRD is low and that obtained by PR and PL is high, and that the discrepancies are larger for the larger indium concentrations. We show that both descrepancies can be accounted for by relaxation of the lattice; elastic relaxation as represented by a radius of curvature, and/or plastic deformation as represented by mismatch dislocations.

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Accurately Determining the Composition and Thickness of Layers in a GaAs/Ingaas Superlattice

  • K.A. Jones (a1), M.W. Cole (a1), J.R. Flemish (a1), R.L. Pfeffer (a1), P. Cooke (a2) and H. Shen (a2)...

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