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Acceptors in ZnO Studied by Photoluminescence

Published online by Cambridge University Press:  01 February 2011

Michael A Reshchikov ,
James Garbus ,
Gabriel Lopez ,
Monica Ruchala ,
Bill Nemeth  and
Jeff Nause
Michael A Reshchikov
Affiliation:
mreshchi@vcu.edu, Virginia Commonwealth University, Physics, 1020 West Main St., Richmond, VA, 23284, United States, 804-828-1613, 804-828-7073
James Garbus
Affiliation:
garbusjw@vcu.edu, Virginia Commonwealth University, Physics, 1020 West Main St., Richmond, VA, 23284, United States
Gabriel Lopez
Affiliation:
lopezg@vcu.edu, Virginia Commonwealth University, Physics, 1020 West Main St., Richmond, VA, 23284, United States
Monica Ruchala
Affiliation:
mruchala@vcu.edu, Virginia Commonwealth University, Physics, 1020 West Main St., Richmond, VA, 23284, United States
Bill Nemeth
Affiliation:
bnemeth@cermetinc.com, Cermet, Inc., Atlanta, GA, 30318, United States
Jeff Nause
Affiliation:
jnause@cermetinc.com, Cermet, Inc., Atlanta, GA, 30318, United States
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Abstract

We studied photoluminescence from melt-grown ZnO crystals annealed in air ambient at different temperatures. Along with intense and sharp excitonic lines, we observed several broad bands presumably related to deep acceptors. Two luminescence bands peaking at 1.95 and 2.15 eV at 10 K were studied in detail at different temperatures. The 1.95 eV band has been attributed to transitions from shallow donors to yet unidentified deep acceptor. Very slow non-exponential decay of this band at low temperatures supports such an assumption.

Keywords

luminescencedefectsII-VI
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K07-19
Copyright
Copyright © Materials Research Society 2007

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References

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