Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T02:16:28.000Z Has data issue: false hasContentIssue false
  • English
  • Français

Absolute Calibration of Sims Depth Profiles of a-SiNx:H/a-Si:H and a-SiOx:H/a-Si:H Multilayers

Published online by Cambridge University Press:  15 February 2011

Jianwei Li ,
Jan M. Chabala  and
Riccardo Levi-Setti
Jianwei Li
Affiliation:
Enrico Fermi Institute and Department of Physics, The University of Chicago5640 S. Ellis Ave., Chicago, IL 60637
Jan M. Chabala
Affiliation:
Enrico Fermi Institute and Department of Physics, The University of Chicago5640 S. Ellis Ave., Chicago, IL 60637
Riccardo Levi-Setti
Affiliation:
Enrico Fermi Institute and Department of Physics, The University of Chicago5640 S. Ellis Ave., Chicago, IL 60637
Get access

Abstract

We calibrated secondary ion mass spectrometry (SIMS) depth profiles of a-SiNx:H/a-Si:H and a-SiOx:H/a-Si:H multilayer samples by comparing them to high-spatial-resolution SIMS maps of cross sections through the layers. Both profiles and images were acquired with a focused scanning 45 keV Ga+ ion microprobe. During depth profiling an area gating technique was used to improve depth resolution. At the beginning of the profile the resolution was 8 nm. By cutting the multilayer films at a small angle through the layers, we obtained SIMS images of cross sections through thesemultilayer samples. The resolution along the expanded direction is about 10 nm. By comparing the depth profiles and the cross section images, we determined the ionbeam-induced atomic mixing in the samples, as a function of depth and the sputtering yield for each layer.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 203
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Levi-Setti, R., Grow, G., and Wang, Y.L., in SIMS V, Berlin: Springer-Verlag (1986) 148.Google Scholar
2. Chabala, J.M., Levi-Setti, R., Li, J., Gavrilov, K. and Soni, K.K. in Proc. 28th Annual MAS Meeting, VCH Publishers, Inc. (1994) 163 Google Scholar
3. This work is supported by the NSF through MRSEC at the University of Chicago. We acknowledge Prof. Fritzsche, H. at U. of Chicago for providing the multilayer samples.Google Scholar