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ZrO2 Layer Thickness and Field Dependent Leakage Current in Ba0.8Sr0.2TiO3/ZrO2 Heterostructured Thin Films

Published online by Cambridge University Press:  30 July 2012

Santosh K. Sahoo ,
Manjulata Sahoo  and
Banshidhar Majhi
Santosh K. Sahoo
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, Colorado 80401, USA New Jersey Institute of Technology, Newark, New Jersey 07102, USA
Manjulata Sahoo
Affiliation:
Department of Computer Science, University at Albany-SUNY, Albany, New York 12222, USA Department of Computer Science and Engineering, PCE Rourkela, Orissa 769002, India
Banshidhar Majhi
Affiliation:
Department of Computer Science and Engineering, NIT Rourkela, Orissa 769008, India
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Abstract

Heterostructured Ba0.8Sr0.2TiO3/ZrO2/Ba0.8Sr0.2TiO3 thin films are fabricated on the platinized Si substrates by a sol-gel process. The current versus voltage measurements are taken on these films by varying the thickness of ZrO2 layer. We have found that inserting a ZrO2 layer in between two BST layers results in a significant reduction in leakage current which is very essential for the low dissipation energy and hence faster operation of memory devices. It is observed that the leakage current further decreases as the ZrO2layer thickness increases. Also it is seen that different conduction mechanisms are contributing to the leakage current in the different field regions. Poole-Frenkel (PF), space charge limited current (SCLC), and Ohmic mechanisms are the dominating conduction processes in high, medium, and low field regions respectively. An energy band diagram is given to explain the Ohmic conduction in the low field region and the Poole-Frenkel conduction mechanism in the high field region for these devices.

Keywords

defectselectrical propertiesthin film
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1454: Symposium HH – Nanocomposites, Nanostructures and Heterostructures of Correlated Oxide Systems , 2012 , pp. 97 - 102
Copyright
Copyright © Materials Research Society 2012

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References

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