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ZnSxO1-x Films Grown on Flexible Substrates

Published online by Cambridge University Press:  27 February 2012

Jesse Huso ,
Hui Che ,
John L. Morrison ,
Dinesh Thapa ,
Michelle Huso ,
Stanley Rhodes ,
Brianna Blanchard ,
Wei Jiang Yeh ,
M. D. McCluskey  and
Leah Bergman
Jesse Huso
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
Hui Che
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
John L. Morrison
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
Dinesh Thapa
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
Michelle Huso
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
Stanley Rhodes
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
Brianna Blanchard
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
Wei Jiang Yeh
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
M. D. McCluskey
Affiliation:
Department of Physics and Materials Science Program, Washington State University Pullman, WA 99164-2814, U.S.A.
Leah Bergman
Affiliation:
Physics Department, University of Idaho Moscow, ID 83844-0903, U.S.A.
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Abstract

Bandgap engineered ZnSxO1-x films were grown on Fluorinated Ethylene Propylene (FEP) substrates and analyzed using transmission spectroscopy. FEP is considered as a potential substrate for application in flexible electronics and semiconductor films.

Keywords

filmopticalsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1394: Symposium M – Oxide Semiconductors–Defects, Growth and Device Fabrication , 2012 , mrsf11-1394-m13-08
Copyright
Copyright © Materials Research Society 2012

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References

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