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X-ray Photoelectron Spectroscopic Studies of Cu-AI alloy/SiO2 Interfaces

Published online by Cambridge University Press:  10 February 2011

Pei-I Wang ,
G. -R. Yang ,
S. P. Murarka  and
T. -M. Lu
Pei-I Wang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, New York 12180
G. -R. Yang
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, New York 12180
S. P. Murarka
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, New York 12180
T. -M. Lu
Affiliation:
Center for Integrated Electronics, Electronics Manufacturing and Electronic Media, Rensselaer Polytechnic Institute, Troy, New York 12180
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Abstract

Cu-Al alloys have been recommended for application as the diffusion barriers/adhesion promoters for advanced copper based metallization schemes. In this study interfacial reaction between Cu-Al alloy/SiO2 is investigated by x-ray photoelectron spectroscopy (XPS). A set of thin Cu-Al alloy films, about 30Å in thickness, are deposited on SiO2 substrates. These were directly examined by XPS. This is followed by a study of the interface formation during bias temperature stressing (BTS) of metal/dielectric interfaces in Cu/Cu-5at.%AI/SiO2 subjected to the electrical testing. Core-level spectra of silicon and aluminum obtained indicate that the reduction of silicon dioxide initiates at room temperature when the aluminum concentration in the copper alloys reaches about 5 atomic percent. The silicon diffusion into metal or vice versa is found to be suppressed during the low temperature anneal (300°C) by the Al2O3 interfacial layer. Also, a difference is present in the observed chemical states and interfacial reaction progressing between sputter and electron-beam deposited films. The films of Cu doped with Al appear to act as a suitable diffusion barrier and adhesion promoter between SiO2 and Cu.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 347
Copyright
Copyright © Materials Research Society 1999

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