Skip to main content Accessibility help
×
Home
Hostname: page-component-559fc8cf4f-x5fd4 Total loading time: 0.211 Render date: 2021-02-26T08:04:37.901Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

WID Rnit Variation Improvements for HSS STI CMP Process using Modified Scribe Lane Pattern Design

Published online by Cambridge University Press:  15 March 2011

Hyuk Kwon
Affiliation:
Memory Research & Development Division, Hynix Semiconductor Inc., Ichon-si, Kyunggi-do, South Korea
Yong-Soo Choi
Affiliation:
Memory Research & Development Division, Hynix Semiconductor Inc., Ichon-si, Kyunggi-do, South Korea
Sang-Hwa Lee
Affiliation:
Memory Research & Development Division, Hynix Semiconductor Inc., Ichon-si, Kyunggi-do, South Korea
Geun-Min Choi
Affiliation:
Memory Research & Development Division, Hynix Semiconductor Inc., Ichon-si, Kyunggi-do, South Korea
Yong-Wook Song
Affiliation:
Memory Research & Development Division, Hynix Semiconductor Inc., Ichon-si, Kyunggi-do, South Korea
Gyu-Han Yoon
Affiliation:
Memory Research & Development Division, Hynix Semiconductor Inc., Ichon-si, Kyunggi-do, South Korea
Get access

Abstract

In the scribe lane, which is located at the frame neighboring two chips, most of the test patterns for monitoring electrical characteristics of memory device as well as various key patterns for photo process are formed. The pattern density of these regions is lower than that of the main chip area, and cause nitride erosion by dishing phenomena during HSS STI CMP process. Nitride erosion occurred in the scribe lane region, could the affect erosion properties of cell region in main chip area, results in within die remain nitride variation and marginal fail in device operation. In this work, in order to prevent these problems, pattern design in the scribe lane was modified so as not to occurs within die remain nitride variation. The effects of improvement in within die remain nitride variation were investigated by FIB-TEM analysis and its correlation with electrical properties were explained.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below.

References

1. Steigerwald, J. M., Muraka, S. P. and Gutmann, R. J., “Chemical Mechanical Planarization of Microelectronic Materials” (John Wiley & Sons, 1997) pp.129∼146.CrossRefGoogle Scholar
2. Choi, K. S., LEE, S. I., Kim, C. I., Nam, C. W., Kim, S. D. and Kim, C. T., 1999 Proceeding of CMP-MIC, 307∼309 (1999).Google Scholar
3. Srinivasan, R., Ameria, W. G., Her, Y. S. and Babu, S. V., 2000 Proceeding of CMP-MIC, 148∼154 (2000).Google Scholar
4. Kim, S. Y., Seo, Y. J., Micro electronic Engineering, 60 (3-4), 357∼364 (2002).Google Scholar
5. Kim, S. Y., Lee, K. J. and Seo, Y. J., Micro electronic Engineering, 66 (1-4), 463∼471 (2003).Google Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 0
Total number of PDF views: 12 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 26th February 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

WID Rnit Variation Improvements for HSS STI CMP Process using Modified Scribe Lane Pattern Design
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

WID Rnit Variation Improvements for HSS STI CMP Process using Modified Scribe Lane Pattern Design
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

WID Rnit Variation Improvements for HSS STI CMP Process using Modified Scribe Lane Pattern Design
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *