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Visible Luminescence from Laser-Induced Stain- and Dry Etched Silicon

Published online by Cambridge University Press:  15 February 2011

D. Dimova-Malinovska ,
M. Tzolov  and
N. Malinowski
D. Dimova-Malinovska
Affiliation:
Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussée Blvd., 1784 Sofia, Bulgaria, photomat@bgearn.bitnet
M. Tzolov
Affiliation:
Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussée Blvd., 1784 Sofia, Bulgaria, photomat@bgearn.bitnet
N. Malinowski
Affiliation:
Max-Plank-Institut fur Festkorperforschung, Heisenbergstrasse 1, D-7000 Stuttgart, Germany
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Abstract

Light emitting silicon has been prepared by Ar laser (514.5 nm) induced stain etching and Nd:YAG impulse (532 nm) laser irradiation in air. Photoluminescence (PL), IR and XPS spectra have been studied. The intensity and position of the PL depend on the power or the energy and the duration of laser beam treatment during the etching. Correlation between the PL and chemical bonding is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 503
Copyright
Copyright © Materials Research Society 1996

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References

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