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Using Growth Kinetics for Nanoengineering of Si-Ge Surfaces

Published online by Cambridge University Press:  10 February 2011

I. Goldfarb  and
G. A. D. Briggs
I. Goldfarb
Affiliation:
University of Oxford, Department of Materials, Parks Road, Oxford OXI 3PH, England, ilan.goldfarb@materials.ox.ac.uk
G. A. D. Briggs
Affiliation:
University of Oxford, Department of Materials, Parks Road, Oxford OXI 3PH, England, ilan.goldfarb@materials.ox.ac.uk
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Abstract

In this work we explore how various growth characteristics of Ge on Si(001) can be used to fabricate structures for potential nanodevices. In the first example, the self-assembling tendency of germanium for three-dimensional islanding on Si(001) is considered, e.g. for application in devices based on quantum dots and wires. We aimed at achieving a detailed understanding of dot nucleation and growth mechanisms from germane. By controlling the deposition parameters, such as the germane pressure and substrate temperature, arrays of dots and antidots can be created on the grown surface, and further modified by post-deposition anneals. While lower temperature deposition leads to randomly distributed dots (i.e. small and coherent three-dimensional clusters with pyramidal shapes), a higher temperature deposition results in formation of antidots (i.e. pyramidal pits), which, in turn, are gradually replaced by the clusters, if the deposition is allowed to continue. The difference is caused by the different hydrogen behaviour at the respective temperature ranges. The germanium tendency to incorporate preferentially at the step and island edges is another beneficial property, which can be used to align the dots along step edges, creating wires rather than dots, or to fabricate ultrasmall Si-Ge heterojunctions, of a less than 10 nanometer size.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 177
Copyright
Copyright © Materials Research Society 1998

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