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Use of Advantageous Impurity Effects in Metallization

Published online by Cambridge University Press:  15 February 2011

S. P. Murarka
S. P. Murarka*
Affiliation:
Center for Integrated Electronics and Electronics Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180
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Abstract

Impurities control electrical, mechanical, physical, and chemical properties of the materials. We have manipulated their introduction into semiconductors, insulators, and metals to achieve otherwise unattainable properties. More recently, the continued miniaturization of the solid state devices and circuits have challenged the existing interconnection and contact metallization materials and schemes. These have led to an investigation of new multilevel metallization schemes with lower resistivities and higher reliabilities. In addition, efforts are being made to re-examine the use of newer Al-alloys that may satisfy the resistivity and reliability requirements. This paper will briefly review the existing practices, future needs, and current research activities focused to satisfy these future needs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 405: Symposium K – Surface/Interface and Stress Effects in Electronic Materials Nanostructures , 1995 , 485
Copyright
Copyright © Materials Research Society 1996

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References

1. Borg, R. J. and Dienes, G. J., ”The Physical Chemistry of Solids”, Academic Press, Boston (1992), Chapter 11.Google Scholar
2. ”Interfacial Segregation”, eds: Johnson, W. C. and Blakely, J. M., ASM, Metals Park, OH (1979).Google Scholar
3. Balluffi, R. W., in reference 2, p. 193.Google Scholar
4. Stein, D. F. and Heldt, L. A., in reference 2, p. 239.Google Scholar
5. Hondros, E.D., J. Phys. 36, coil C4-117, also see Seah, M.P. and Hondros, E.D., Proc. Roy. Soc. (London), A335, 191 (1973).Google Scholar
6. Paxton, H. W., in ”Alloying”, eds. Walter, J. L., Jackson, M. R., and Sims, C. T., ASM International, Metals Park, OH (1988), p. 199.Google Scholar
7. Nicolet, M.-A., Thin Solid Films 52 415 (1974).Google Scholar
8. Gupta, D., Met. Trans. 8A, 1431 (1977).Google Scholar
9. Murarka, S. P., Li, S. C., Guo, X. S., and Lanford, W. A., J. Appl. Phys. 72, 4208 (1992).Google Scholar
10. Kuhlmann, D. D., M.S. Thesis, RPI, Troy, NY (1989).Google Scholar
11. Rodbell, K. P., Ph.D. Thesis, RPI, Troy, NY (1986).Google Scholar
12. Apblett, C., Ph.D. Thesis, RPI, Troy, NY (1992).Google Scholar
13. Several MRS Proceedings volumes (MRS, Pittsburgh) have come out. The latest one is vol.386 (1995).Google Scholar
14. From ”Handbook of Chemistry and Physics”, 72nd edition, Ed. Lide, D. R., CRC Press, Boca Raton, FL (1991–1992).Google Scholar
15. Ogawa, S. and Nishimura, H., in Proc. 1991 IEDM, Cat. No. 91CH3075-9, IEEE, Piscataway, NJ (1991), p. 277. See also 1993 IEDM Proc. Cat. No. 93CH3361-3, p. 281.Google Scholar
16. Murarka, S. P. and Hymes, S. W., Critical Reviews in Solid State and Materials Sciences 20, 87 (1995).Google Scholar
17. Toomey, J. J., Hymes, S., and Murarka, S. P., Appl. Phys. Lett. 66, 2074 (1995).Google Scholar
18. Ding, P. J., Lanford, W. A., Hymes, S., and Murarka, S. P., Appl. Phys. Lett. 64, 2897 (1994).Google Scholar
19. Takewaki, T., Tohoku University, presentation at RPI, Dec. (1995).Google Scholar
20. Hymes, S. W., Kumar, K. S., Murarka, S. P., Wang, W., and Lanford, W. A., to be published.Google Scholar