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Ultraviolet Photodetection Properties of ZnO Microtubes

Published online by Cambridge University Press:  01 February 2011

Jiping Cheng ,
Ming Fu ,
Yunjin Zhang  and
Ruyan Guo
Jiping Cheng
Affiliation:
jxc44@psu.edu, Pennsylvania State University, Materials Research Institute, 129A Materials Research Lab, University Park, PA, 16802, United States, 814-865-4571, 814-865-2326
Ming Fu
Affiliation:
muf14@psu.edu, Pennsylvania State University, University Park, PA, 16802, United States
Yunjin Zhang
Affiliation:
yxz16@psu.edu, Pennsylvania State University, University Park, PA, 16802, United States
Ruyan Guo
Affiliation:
rxg11@psu.edu, Pennsylvania State University, University Park, PA, 16802, United States
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Abstract

Photodetectors based on wide-bandgap semiconductors have demonstrated several advantages over traditional ultraviolet (UV) detectors (photomultiplier tubes and Si-based UV detectors) such as low power consumption, high stability, and no need of other optical filters. ZnO stands a good chance of being a candidate material for solar-blind UV detection because of its direct bandgap of 3.37eV and high photoresponse. In this work, single crystal ZnO microtubes synthesized using a microwave-heating growth method and their UV photodetection properties were studied. The ZnO microtubes exhibited relatively fast UV photoresponse with a cut-off wavelength ∼370 nm, indicating their potential applications as high efficient and low cost UV detectors.

Keywords

photoconductivitymicroelectronicsZn
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K01-07
Copyright
Copyright © Materials Research Society 2007

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References

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