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Ultrathin Silicon Dioxide Formation By Ozone On Ultraflat Si Surface

Published online by Cambridge University Press:  10 February 2011

A. Kurokawa
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, JAPAN
T. Maeda
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, JAPAN
K. Sakamoto
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, JAPAN
H. Itoh
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, JAPAN
K. Nakamura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, JAPAN
K. Koike
Affiliation:
Iwatani International Corp., 4-5-1 Katsube, Moriyama, 524-0041, JAPAN
D.W. Moon
Affiliation:
Korea Research Institute of Standards and Science, Taejon 305-606, Korea
Y.H. Ha
Affiliation:
Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea
S. Ichimura
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, JAPAN
A. Ando
Affiliation:
Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba, 305-8568, JAPAN
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Abstract

We prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone-oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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