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Ultra-Fast Melting and Solidification Behaviour of Amorphous and Crystalline Silicon

Published online by Cambridge University Press:  22 February 2011

A.G. Cullis ,
H.C. Webber  and
N.G. Chew
A.G. Cullis
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs. WR14 3PS, England
H.C. Webber
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs. WR14 3PS, England
N.G. Chew
Affiliation:
Royal Signals and Radar Establishment, Malvern, Worcs. WR14 3PS, England
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Abstract

Subnanosecond ultra-violet radiation pulses are used to produce relatively thick, large area amorphous layers onSi crystals by transient melting and solidification. The different behaviours of (001) and (111) Si orientations are highlighted. Observations of crystal growth phenomena during solidification at velocities lower than required for amorphization are correlated with theoretical predictions. Computer modelling of heat flow in amorphous silicon is refined.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 105
Copyright
Copyright © Materials Research Society 1984

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References

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