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A Two Step Rapid Thermal Annealing Process for Be Implant Activation in GaAs

Published online by Cambridge University Press:  28 February 2011

D.L. Plumton ,
W.M. Duncan  and
L.T. Tran
D.L. Plumton
Affiliation:
Texas Instruments Incorporated Central Research Laboratories, Dallas, Tx 75265
W.M. Duncan
Affiliation:
Texas Instruments Incorporated Central Research Laboratories, Dallas, Tx 75265
L.T. Tran
Affiliation:
Texas Instruments Incorporated Central Research Laboratories, Dallas, Tx 75265
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Summary abstract

A two step rapid thermal anneal (RTA) has been studied for activating Be implanted GaAs, where a short duration, high temperature step is used to electrically activate the Be followed by a longer, low temperature anneal for lattice regrowth. p-n diodes show a substantial reduction in reverse diode leakage current after the low temperature second step anneal, when compared to a single step RTA or to furnace annealing (FA). For low energy Be implants, no difference in elecrical activiation between the two step anneal is observed. Raman studies demonstrate that residual substrate impurities and high Be concentrations inhibit restoration of single crystal lattice characteristics after RTA. Lattice quality is shown not to limit diode characteristics in the RTA material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 475
Copyright
Copyright © Materials Research Society 1987

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