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Tungsten Silicide Zinc as a High Temperature Zinc Diffusion Source

Published online by Cambridge University Press:  28 February 2011

D.L. Plumton
D.L. Plumton*
Affiliation:
Texas Instruments Incorporated Central Research Laboratories, Dallas, TX 75265
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Abstract

A process for Zn diffusion into GaAs during rapid thermal processing has been developed using Zn doped tungsten silicide as the diffusion source. The WSi:Zn is a sputter deposited, solid source layer that undergoes capless annealing in a quartz-halogen lamp system. For a given time and temperature the diffusion of Zn into GaAs is controlled by both the Zn concentration and the W/Si ratio in the film. Tungsten-rich films are Zn concentration “independent” while Si-rich films are Zn concentration “dependent.” Changing the film composition allows shallow Zn diffusions at either a low or a high temperature. Deep Zn diffusions are possible through higher temperatures or longer anneal times for any given WSi:Zn composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 469
Copyright
Copyright © Materials Research Society 1987

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