Published online by Cambridge University Press: 21 March 2011
The electrical performance of transistors built using thin films of the column IVB metal oxides ZrO2 and HfO2 deposited from their respective anhydrous metal nitrate precursors is presented. In contrast to earlier work on TiO2, which is thermodynamically unstable on silicon, ZrO2 and HfO2 form well-defined oxynitride interfacial layers and have a good interface with silicon with much less fixed charge. The inversion layer mobility for an HfO2 / SiOxNy / Si stack is comparable to that of a conventional SiOxNy/Si interface.
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