Transient Electrochemical Measurements During Copper Chemical Mechanical Polishing
Published online by Cambridge University Press: 01 February 2011
Chronoamperometry was used to investigate the reaction/passivation kinetics and thickness of the chemically modified surface layer on the copper during chemical mechanical polishing (CMP). The result showed that the reaction/passivation kinetics and the thickness of the chemically modified surface layer are strongly dependent on the chemistry of CMP slurry in the chemical aspect of CMP and play critical keys in the selection of the chemistry and its concentration. BTA and H2O2 enhanced the passivation kinetics, resulting in thinner layer on the copper surface. In addition, the reaction kinetics increased as pH decreased.
- Research Article
- MRS Online Proceedings Library (OPL) , Volume 767: Symposium F – Chemical-Mechanical Planarization , 2003 , F2.9
- Copyright © Materials Research Society 2003