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The transformations of the EL6 deep level defect in n-GaAs: Is EL6 a DX-like center?
Published online by Cambridge University Press: 10 February 2011
Abstract
Based on the charge redistribution effect, as observed by the present authors, and the earlier reported large lattice relaxation and persistent photoconductivity phenomena associated with the EL6 defect seen in doped, undoped, semiinsulating(SI) and low temperature grown GaAs LT-GaAs), it is suggested that this defect be classified as a DX-center. A tentative unified atomic model is proposed for all the native defects EL2, EL3, EL5, and EL6 observed in GaAs.
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- Copyright © Materials Research Society 1998
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