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Transamination in Pulsed DC-Plasma Enhanced CVD Of Ti(C,N) From TDMAT

Published online by Cambridge University Press:  10 February 2011

J. P. A. M. Driessen ,
A. D. Kuypers  and
J. Schoonman
J. P. A. M. Driessen
Affiliation:
TNO Institute of Applied Physics, Department of Materials Chemistry & Coatings Den Dolech 2, 5612 AZ, Eindhoven, The Netherlands Laboratory for Inorganic Chemistry, Faculty of Applied Sciences, Delft University of Technology, Julianalaan 136, 2628 BL, Delft, The Netherlands
A. D. Kuypers
Affiliation:
TNO Institute of Applied Physics, Department of Materials Chemistry & Coatings Den Dolech 2, 5612 AZ, Eindhoven, The Netherlands
J. Schoonman
Affiliation:
Laboratory for Inorganic Chemistry, Faculty of Applied Sciences, Delft University of Technology, Julianalaan 136, 2628 BL, Delft, The Netherlands
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Abstract

Favourable gas-phase conditions for deposition of Ti(C,N) from tetrakis(dimethylamine)titanium (TDMAT) in a pulsed DC-plasma have been determined, making use of mass spectroscopy. Decomposition of TDMAT in a pure hydrogen plasma results in the favourable cleavage of dimethylamine from TDMAT but prevents the formation of Ti(C,N) due to the lack of nitrogen and carbon. Addition of N2 to the hydrogen plasma results in the formation of NHx (l<x<4), opening possible transamination pathways. Transamination plays an important role in thermal CVD processes and results in high quality TiN layers. However, an undesired side-effect is the gas-phase particle formation under the conditions used here, possibly due to TDMAT - N2 interactions. The depletion of TDMAT by interaction with nitrogen in a H2(85%) - N2(15%) plasma proceeds in a mechnistic step with a rate constant of k = 4.7 × 10−14 cm3 mol−1sec. Results were compared with those obtained from using ammonia under similar process conditions, and with results from thermal CVD. Seemingly high quality Ti(C,N) coatings were deposited at temperatures between 200°C and 425°C on steel and glass with this simple and, therefore, interesting set-up.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 564: Symposium N – Advanced Interconnects and Contacts , 1999 , 183
Copyright
Copyright © Materials Research Society 1999

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References

1. C.I.M.A., Spee, J.P.A.M., Driessen, and Kuypers, A.D., J. Phys. IV, 5, C5 / 719–734 (1995).Google Scholar
2. J.A., Prybyla, C.-M., Chiang, and L.H., Dubois, J. Electrochem. Soc., 140(9), 2695 – 2702 (1993).Google Scholar
3. P.J., Chen, C.M., Truong, J.S., Corneille, W.S., Oh, and D.W., Goodman in Proc. Mat. Res. Soc. Symp.: “Advanced Metallization for Devices and Circuits -Science, Technology, and Manufacturability III (1994).Google Scholar
4. L.H., Dubois, Polyhedron, 13(8), 1329 – 1336 (1994).Google Scholar
5. J.N., Musher and R.G., Gordon, J. Mater. Res. 11, 89–1001 (1996).Google Scholar
6. B.H., Weiller, Chem. Mater., 7 (1995), 1609–1611 (1995).Google Scholar
7. B.H., Weiller, J. Am. Chem. Soc., 118, 4975–4983 (1996).Google Scholar
8. H.-R., Stock, H., Berndt, and P., Mayr, Surf. & Coat. Techn., 46,5–23 (1991).Google Scholar
9. Ch., Täschner, K., Bartsch, and A., Leonhardt, Surf & Coat. Techn., 59, 207–211 (1993).Google Scholar
10. A., Intemann, H., Koerner, and F., Koch, J. Electrochem. Soc., 140, 3215–3222 (1993).Google Scholar
11. Driessen, J.P.A.M., Kuypers, A.D., and Schoonman, J., Surf.& Coat. Techn., 110, 173–183 (1998).10.1016/S0257-8972(98)00696-3Google Scholar
12. Driessen, J.P.A.M., Kuypers, A.D., and Schoonman, J., to be published.Google Scholar