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TOF-LEIS Characterization and Growth of GaN Thin Films Grown with ECR and NH3

Published online by Cambridge University Press:  10 February 2011

E. Kim ,
A. Bensaoula ,
I. Rusakova ,
A. Shultz  and
K. Waters
E. Kim
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5507
A. Bensaoula
Affiliation:
Space Vacuum Epitaxy Center, University of Houston, Houston, TX 77204-5507
I. Rusakova
Affiliation:
Texas Center for Superconductivity, University of Houston, Houston, TX 77204
A. Shultz
Affiliation:
Ionwerks, 2472 Bolsover suite 255, Houston, TX 77005
K. Waters
Affiliation:
Ionwerks, 2472 Bolsover suite 255, Houston, TX 77005
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Abstract

GaN thin films were grown on various substrates by GSMBE using ECR nitrogen and ammonia. The growth of GaN was monitored by real time analysis, time of flight low energy ion scattering (TOF-LEIS) and RHEED.

Growth of GaN on GaAs, ZnO, Ge and Al2O3 was investigated. The substrates’ surfaces were analyzed during pre-growth annealing and during GaN growth. The removal of surface contaminants and the modification of the surface stoichiometry from these surfaces are presented.

GaN films on sapphire (0001) grown under different conditions were examined real time by low energy ion scattering mass spectroscopy of recoiled ion (MSRI) and the relationship between the in-situ surface composition with ex-situ photoluminescence measurement results are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 319
Copyright
Copyright © Materials Research Society 1997

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References

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