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To Probe the Absorption Edge of Porous Silicon by Erbium

Published online by Cambridge University Press:  10 February 2011

Xinwei Zhao ,
Shuji Komuro ,
Shinya Maruyama ,
Hideo Isshiki ,
Yoshinobu Aoyagi  and
Takuo Sugano
Xinwei Zhao
Affiliation:
Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
Shuji Komuro
Affiliation:
Faculty of Engineering, Toyo University, Kawagoe, Saitama 350, Japan
Shinya Maruyama
Affiliation:
Faculty of Engineering, Toyo University, Kawagoe, Saitama 350, Japan
Hideo Isshiki
Affiliation:
Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
Yoshinobu Aoyagi
Affiliation:
Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
Takuo Sugano
Affiliation:
Frontier Research Program, The Institute of Physical and Chemical Research (RIKEN), Wako, Saitama 351-01, Japan
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Extract

Intra-4f-transitions from erbium atoms are proposed as a probe to determine absorption edges of the hosts. This idea was firstly applied on erbium-doped porous silicon materials. Intense and sharp 1.54 μm luminescence from erbium triply ionized ions as well as visible emissions from porous silicon were observed up to room temperature. Photoluminescence excitation spectroscopy investigations of the samples indicate identical absorption edges for both the 1.54 μm and the visible emissions. No 1.54 μm luminescence can be observed by directly exciting the erbium triply ionized ions. This fact suggests that the erbium ions are excited by energy transfer process from the excited carriers in the hosts. From this result, we can propose that erbium could behave as a good probe to determine the absorption edge or the bandgap of the host material even it is not luminescent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 143
Copyright
Copyright © Materials Research Society 1996

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References

1. For example, see Rare Earth Doped Semiconductors, edited by Pomrenke, G. S., Klein, P. B., and Langer, D. W. (Mater. Res. Soc. Proc. 301, Pittsburgh, PA 1993).Google Scholar
2. Coffa, S., Priolo, F., Franzo, G., Bellani, V., Camera, A. and Spinelle, C., Phys. Rev. B 48, 11782 (1994).Google Scholar
3. Favennec, P. N., L'Haridon, H., Salvi, M., Moutonnet, D. and Guillou, Y. Le, Electron Lett. 25, 718 (1989).Google Scholar
4. Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).Google Scholar
5. Lehmann, V. and Gosele, U.: Appl. Phys. Lett. 58, 856 (1991).Google Scholar
6. Kimura, T., Yokoi, A., Horiguchi, H., Saito, R., Ikoma, T. and Saito, A., Appl. Phys. Lett. 65,983 (1994).Google Scholar
7. Komuro, S., Kato, T., Morioka, T., O'Keeffe, P. and Aoyagi, Y., Appl. Phys. Lett. 68,949 (1996).Google Scholar
8. Taguchi, A., Nakagome, H. and Takahei, K., J. Appl. Phys. 70, 5604 (1991).Google Scholar
9. Zhao, X., Hirakawa, K. and Ikoma, T., Proc. of 2rd ICMPC for VLSI, 549 (Shanghai 1991).Google Scholar