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Titanium Silicidation by Halogen Lamp Annealing

Published online by Cambridge University Press:  25 February 2011

T. Okamoto ,
M. Shimizu ,
K. Tsukamoto  and
T. Matsukawa
T. Okamoto
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
M. Shimizu
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
K. Tsukamoto
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
T. Matsukawa
Affiliation:
LSI R&D Lab., Mitsubishi Electric Corp.Mizuhara, Itami, Hyogo, 664, JAPAN
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Abstract

Silicidation of titanium on silicon is carried out with the halogen lamp annealing. It is found that the lamp annealing is quite effective in forming an oxide-free and homogeneous titanium disilicide layer with resistivity of 15–17 μohm·cm. Rutherford backscatterring and X-ray diffraction studies show that the halogen lamp annealing over 650 °C for only 60 sec results in disilicide. By a silicidation reaction, arsenic and boron atoms at silicon beneath a titanium layer are incorporated into a formed silicide layer. Arsenic atoms initially in a titanium layer are swept toward the surface as silicidation reaction proceeds. Arsenic atoms in titanium have an effect to retard silicidation reaction.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 471
Copyright
Copyright © Materials Research Society 1985

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References

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