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TiNi/GaAs Thin Film Structures for Gate Metallizations

Published online by Cambridge University Press:  17 March 2011

Chichang Zhang  and
Aris Christou
Chichang Zhang
Affiliation:
Dept. Materials Science and Engineering, Univ. of Maryland at College Park College Park, Maryland, 20742, USA
Aris Christou
Affiliation:
Dept. Materials Science and Engineering, Univ. of Maryland at College Park College Park, Maryland, 20742, USA
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Abstract

Shape memory alloy TiNi thin films on GaAs have been investigated. A series of TiNi compositions were electron beam deposited on GaAs initially as thin multilayers of Ti and Ni. The intermetallic phase of TiNi was formed by annealing and complete intermixing of the multilayers at 370oC. The intermetallic phases were investigated with X-ray diffraction techniques. The annealing kinetics and resistivity investigations were carried out in order to minimize the sheet resistance of the intermetallic phase. TiNi Schottky barriers on GaAs have been fabricated and their performance will be reported. Additional investigations on surface morphology using the energy dispersive spectroscopy as well as TEM investigations show the correlation between microstructure, intermetallic phase formation and sheet resistance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 648: Symposium P – Growth, Evolution & Properties of Surfaces, Thin Films, and Self Organized Structure , 2000 , P11.31
Copyright
Copyright © Materials Research Society 2001

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