Hostname: page-component-5c6d5d7d68-pkt8n Total loading time: 0 Render date: 2024-08-23T10:26:28.005Z Has data issue: false hasContentIssue false

Time Resolved Photoluminescence of Yb in InP

Published online by Cambridge University Press:  26 February 2011

P. B. Klein*
Affiliation:
Naval Research Laboratory, Washington, DC 20375
Get access

Abstract

Time resolved photoluminescence (PL) measurements of the internal 4f-4f transitions of Yb3+ have been carried out in InP and GaP. In InP a nonexponential component is observed in the PL decay, and is interpreted in terms of carrier capture by nonequilibrium Yb3+. At low temperatures the exponential component is found to be much faster (≈12.5 μsec) than expected, and is tentatively associated with a weak coupling to resonant valence band states. As the temperature is increased, the PL intensity and the exponential component of the excited state lifetime are quenched with a thermal activation energy of ≈0.1 eV. This is interpreted as being due to the emission of a hole into the valence band by the neutral Yb acceptor.

Type
Research Article
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Ennen, H. and Schneider, J., J. Electron. Mater. 14A, 115 (1985), and references therein.Google Scholar
2.Kasatkin, V.A., Kesamanly, F.P. and Samorukov, B.E., Fiz. Tekh. Poluprovodn. 15, 616 (1981) [Sov. Phys. Semicond. 15, 353 (1981)].Google Scholar
3.Zakharenkov, L.F., Kasatkin, V.A., Kesamanly, F.P., Samorukov, B.E. and Sokolova, M.A., Fiz. Tekh. Poluprovodn. 15, 1631 (1981) [Sov. Phys. Semicond. 15, 946 (1981)].Google Scholar
4.Kasatkin, V.A., Masterov, V.F., Romanov, V.V., Samorukov, B.E. and Shtel'makh, K. F., Fiz. Tekh. Poluprovodn. 16, 173 (1982) [Sov. Phys. Semicond. 16, 108 (1982)].Google Scholar
5.Ennen, H., Kaufmann, U., Pomrenke, G., Schneider, J., Windscheif, J. and Axmann, A., J. Cryst. Growth 6A, 165 (1983).Google Scholar
6.Wagner, J., Windscheif, J. and Ennen, H., Phys. Rev. B30, 6230 (1984).Google Scholar
7.Ermakov, L.K., Kasatkin, V.A. and Pasechnik, L.P., Opt. Spektrosk. 57, 11 (1984) [Opt. Spectrosc. (USSR) 52, 6 (1984)].Google Scholar
8.Kasatkin, V.A. and Savel'ev, V.P., Fiz. Tekh Poluprovodn. 18,1634.(1984) [Sov. Phys. Semicond. 18, 1022 (1984)].Google Scholar
9.Kasatkin, V.A., Lavrent'ev, A.A. and Rodnyl, P.A., Fiz. Tekh. Poluprovodn. 19, 353 (1985) [Sov. Phys. Semicond. 12, 221 (1985)].Google Scholar
10.Ennen, H., Pomrenke, G. and Axmann, A., J. Appl. Phys. 57, 2182 (1985).Google Scholar
11.Aszodi, G., Weber, J., Uihlein, Ch., Pu-lin, L., Ennen, H., Kaufmann, U., Schneider, J. and Windscheif, J., Phys. Rev. B 31, 7767 (1985).Google Scholar
12.Kallenbach, R., Reyher, H.J., Unruh, J., Winnacker, A. and Ennen, H., in Defects in Semiconductors, edited by von Bardeleben, H. J. (Trans Tech Ltd., Switzerland, 1986), p. 681.Google Scholar
13.Masterov, V.F., Romanov, V.V. and Shtel'makh, K.F., Fiz. Tverd. Tela 25, 1435 (1983) [Sov. Phys. Solid State 25, 824 (1983)].Google Scholar
14.Haydl, W.H., Muiller, H.D. and Ennen, H., Appl. Phys. Lett. 46, 870 (1985).Google Scholar
15.Hemstreet, L.A., in Defects in Semiconductors, edited by von Bardeleben, H. J. (Trans Tech Ltd., Switzerland, 1986), p. 85.Google Scholar
16.DiBartolo, B., Optical Interactions in Solids, (Wiley, New York, 1968).Google Scholar
17.Bimberg, D., Sondergeld, M. and Grobe, E., Phys. Rev. B 4, 3451 (1971).Google Scholar
18.Ruihle, W., Schmid, W., Meck, R., Stath, N., Fischbach, J.U., Strottner, I., Benz, K.W. and Pilkuhn, M., Phys. Rev. B 18, 7022 (1978).Google Scholar
19.Langer, J., in Light Emitters and Detectors, edited by Herman, M. (Pergamon, New York, 1983), p. 303.Google Scholar