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Thermally Activated Charge Hopping Transport Studies in a Σ-Conjugated Polymer

Published online by Cambridge University Press:  25 February 2011

L. Samuel
T.J. Watson Research Center, IBM Corporation, P.O. Box 218, Yorktown Heights, NY 10598
P. N. Sanda
T.J. Watson Research Center, IBM Corporation, P.O. Box 218, Yorktown Heights, NY 10598
R. D. Miller
Almaden Research Center, IBM Corporation, San Jose, CA 95120
D. Thompson
Almaden Research Center, IBM Corporation, San Jose, CA 95120
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Time of flight (TOF) and thermally stimulated current (TSC) measurements were performed on poly(methylphenylsilane) (PMPS), poly(ethyl-p-methoxyphenylsilane) (PMeOPhEtS) and poly(ethylphenylsilane) (PEtPhS), to study the mechanism of interchain charge hopping transport. The value of the hole mobility at a given electric field and temperature varied with the substituent side groups. The activation energies, which were assigned to the hopping transport, ranged between 0.1-0.3eV and were dependent on the applied electric field. The nature of this dependence also varied with the substituent side groups. In the TSC spectra, a well defined current peak was observed in the temperature range between 100K-160K. The peak temperature was dependent both on the electric field and the heating rate. For a constant electric field and heating rate it was also dependent on the side groups, in a manner which was consistent with the results obtained by TOF. When the samples were exposed to high doses of UV radiation, a secondary peak at ∽180K was observed, which was attributed to surface defect sites produced by the UV exposure.

Research Article
Copyright © Materials Research Society 1990

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