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Thermal Stability of Si/Si0.85Ge0.15/Si Modulation Doped Double Heterostructures

Published online by Cambridge University Press:  28 February 2011

P.J. Wang ,
B.S. Meyerson ,
P.M. Fahey ,
F. LeGoues ,
G.J. Scilla  and
J. M. Cotte
P.J. Wang
Affiliation:
IBM T. J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
B.S. Meyerson
Affiliation:
IBM T. J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
P.M. Fahey
Affiliation:
IBM T. J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
F. LeGoues
Affiliation:
IBM T. J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
G.J. Scilla
Affiliation:
IBM T. J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
J. M. Cotte
Affiliation:
IBM T. J. Watson Research Center, P.O.Box 218, Yorktown Heights, NY 10598
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Abstract

The thermal stability of Si/Si0.85Ge0.15/Si p-type modulation doped double heterostructures grown by the Ultra High Vacuum/ Chemical Vapor Deposition technique has been examined by Hall measurement, transmission electron microscopy, secondary ion mass spectroscopy, and Raman spectroscopy. As deposited heterostructures showed two-dimensional hole gas formation at the abrupt Si/SiGe and SiGe/Si interfaces. Annealing at 800 °C. for 1 hr. caused the diffusion of boron acceptors to the heterointerfaces, degrading the hole mobilities observed in the two dimensional hole gas. Rapid redistribution of boron, causing a loss of the 2 dimensional carrier behavior, was observed after a 900 °C, 0.5 hr. anneal. Neither Ge interdiffusion nor the generation of misfit dislocations were observed in the annealed heterostructures, evincing the defect-free crystal quality of these as-grown strained heteroepitaxial layers. The superior stability of these heterostructures have strong positive implications for Si:Ge heterojunction devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 89
Copyright
Copyright © Materials Research Society 1990

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