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Thermal Stability of p-type Bi2Te3/Sb2Te3 and n-type Bi2Te3/Bi2Te2-xSex Thermoelectric Superlattice Thin Film Devices

Published online by Cambridge University Press:  01 February 2011

K. D. Coonley ,
B. C. O'Quinn ,
J. C. Caylor  and
R. Venkatasubramanian
K. D. Coonley
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709
B. C. O'Quinn
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709
J. C. Caylor
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709
R. Venkatasubramanian
Affiliation:
Research Triangle Institute, Research Triangle Park, North Carolina 27709
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Abstract

Thermolectric devices have been constructed using Bi2Te3/Sb2Te3 and Bi2Te3/Bi2Te2-xSex superlattice thin films. Since these devices are intended for use in systems that will operate at elevated temperatures over their lifetime as in many power conversion applications, thermal stability of the thermoelectric figure of merit is an important consideration. The ZTe of p-type and n-type superlattice thin film elements was evaluated at specific intervals during exposure to elevated temperatures of 150°C for up to 60 hrs. Results indicate that the figure of merit for p- and n-type superlattice films is not compromised over time when exposed to these operating temperatures. In fact, both p- and n-type superlattice thin film ZTe remains very constant or improves slightly when subjected to continuous exposure to elevated temperatures. Evaluation of these thin film thermoelements is reported and implications of these results are considered for thin film thermoelectric modules.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 793: Symposium S – Thermoelectric Materials 2003 - Research and Applications , 2003 , S2.5
Copyright
Copyright © Materials Research Society 2004

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References

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