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Thermal Stability of GaN Investigated by Raman Scattering

Published online by Cambridge University Press:  15 February 2011

M. Kuball ,
F. Demangeot ,
J. Frandon ,
M.A. Renucci ,
N. Grandjean  and
O. Briot
M. Kuball
Affiliation:
H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 ITL, UNITED KINGDOM
F. Demangeot
Affiliation:
(2)Laboratoire de Physique des Solides de Toulouse, CNRS, Université Paul Sabatier, F-31062 Toulouse Cedex, France
J. Frandon
Affiliation:
(2)Laboratoire de Physique des Solides de Toulouse, CNRS, Université Paul Sabatier, F-31062 Toulouse Cedex, France
M.A. Renucci
Affiliation:
(2)Laboratoire de Physique des Solides de Toulouse, CNRS, Université Paul Sabatier, F-31062 Toulouse Cedex, France
N. Grandjean
Affiliation:
CRHEA-CNRS, Rue Bernard Gregory, F-06560 Valbonne, France
O. Briot
Affiliation:
GES-CNRS, CC074 Université Montpellier II, Place E.Bataillon F-34095 Montpellier Cedex 5, France
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Abstract

We have investigated the thermal stability of GaN using Raman scattering. Noninvasive optical monitoring of the degradation of GaN during high-temperature processing has been demonstrated. GaN samples grown by molecular-beam epitaxy (MBE) and metalorganic vapor phase epitaxy (MOCVD) were studied. Characteristic features in the Raman spectrum identify three thermal stability regimes: (1) annealing below 900°C does not affect the GaN Raman spectrum; (2) annealing between 900°C and 1000°C results in the appearance of disorder-induced Raman scattering between the E2 and A1(LO) phonon; (3) annealing at temperatures higher than 1000°C gives rise to distinct Raman modes at 630 cm-1, 656 cm-1 and 770 cm-1. The evolution of the Raman spectrum of GaN with increasing annealing temperature is discussed in terms of disorder-induced Raman scattering. We find clear indications for an interfacial reaction between GaN and sapphire for annealing temperatures higher than 1000°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G6.28
Copyright
Copyright © Materials Research Society 1999

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References

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