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Thermal Residual Stress Modeling in Ain and GaN Multi Layer Samples

Published online by Cambridge University Press:  15 February 2011

Kai Wang  and
Robert R. Reeber
Kai Wang
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7907
Robert R. Reeber
Affiliation:
Department of Materials Science and Engineering North Carolina State University, Raleigh, NC 27695-7907
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Abstract

Thermal residual stresses can detrimentally affect the electronic and optical properties of epitaxial films thereby shortening device lifetime. Based on our earlier work on thermal expansion of nitrides, we provide a finite element modeling analysis of the residual stress distribution of multilayered GaN and AlN on 6H-SiC. The effects of thickness and growth temperatures are considered in the analysis.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 537: Symposium G – GaN and Related Alloys , 1998 , G3.18
Copyright
Copyright © Materials Research Society 1999

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