Skip to main content Accessibility help
×
Home
Hostname: page-component-7ccbd9845f-dzwm5 Total loading time: 0.347 Render date: 2023-01-28T03:30:09.784Z Has data issue: true Feature Flags: { "useRatesEcommerce": false } hasContentIssue true

Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films

Published online by Cambridge University Press:  25 February 2011

Xixiang Xu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Akiharu Morimoto
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Minoru Kumeda
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Tatsuo Shimizu
Affiliation:
Department of Electronics, Faculty of Technology, Kanazawa University, Kanazawa 920, Japan
Get access

Abstract

Both the temperature dependence at elevated temperature and the increase after fast cooling from elevated temperature of the density of dangling bonds are measured by ESR for undoped hydrogenated amorphous silicon–based alloy films, a–Si:H, a–Si1−xCx:H, a–Si1−xNx:H and a–Si1−xOx:H. Both a–Si:H and a–Si1−xCx:H clearly show the increase in the density of dangling bonds at elevated temperature, while the increase is less prominent for a–Si1−xNx:H and a–Si1−xOx:H. The observed results for both a–Si:H and a–Si1−xCx:H are fairly well reproduced by the model recently proposed by Smith et al. The results of CPM measurements combined with those of ESR measurements suggest that the density of charged dangling bonds present in undoped a–Si:H also increases after fast cooling from elevated temperature.

Type
Research Article
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Smith, Z E., and Wagner, S., Phys. Rev. B 32, 5510 (1985).CrossRefGoogle Scholar
2. Street, R. A., Kakalios, J., Tsai, C. C., and Hayes, T. M., Phys. Rev. B 35, 1316 (1987).CrossRefGoogle Scholar
3. Stutzmann, M., Phys. Rev. B 35, 9735 (1987).CrossRefGoogle Scholar
4. McMahon, T. J., and Tsu, R., Appl. Phys. Lett. 41, 412 (1987).CrossRefGoogle Scholar
5. Street, R. A., Hack, M., and Jackson, W. B., Phys. Rev. B 37, 4209 (1988).CrossRefGoogle Scholar
6. Smith, Z.E., Aljishi, S., Slobodin, D., Chu, V., and Wagner, S., Phys. Rev. Lett. 57, 2450 (1986).CrossRefGoogle Scholar
7. Xu, X., Morimoto, A., Kumeda, M., and Shimizu, T., Appl. Phys. Lett. 52, 622 (1988).CrossRefGoogle Scholar
8. Kakalios, J., Street, R. A., and Jackson, W. B., Phys. Rev. Lett. 59, 1037 (1987).CrossRefGoogle Scholar
9. Meaudre, R., Jensen, P., and Meaudre, M., Phys. Rev. B 38, 12449 (1988).CrossRefGoogle Scholar
10. Xu, X., Okumura, A., Morimoto, A., Kumeda, M., and Shimizu, T., Phys. Rev. B 38, 8371 (1988).CrossRefGoogle Scholar
11. Smith, Z. E., and Wagner, S., in Amorphous Silicon and Related Materials, edited by H. Fritzsche (1988) p.409.Google Scholar
12. Shimizu, T., Xu, X., Kidoh, H., Morimoto, A., and Kumeda, M., J. Appl. Phys. 64, 5045 (1988).CrossRefGoogle Scholar
13. Shimizu, T., Kidoh, H., Morimoto, A., and Kumeda, M., Jpn. J. Appl. Phys. 28, No.4(1989).Google Scholar
14. Smith, Z. E., and Wagner, S., Phys. Rev. Lett. 59, 688 (1987).CrossRefGoogle Scholar
15. Okushi, H., private communication.Google Scholar

Save article to Kindle

To save this article to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films
Available formats
×

Save article to Dropbox

To save this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Dropbox account. Find out more about saving content to Dropbox.

Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films
Available formats
×

Save article to Google Drive

To save this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you used this feature, you will be asked to authorise Cambridge Core to connect with your Google Drive account. Find out more about saving content to Google Drive.

Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films
Available formats
×
×

Reply to: Submit a response

Please enter your response.

Your details

Please enter a valid email address.

Conflicting interests

Do you have any conflicting interests? *