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Thermal Conductivity of Porous Silicon Evaluated from Phase Characteristics of Photoacoustic Spectroscopy

Published online by Cambridge University Press:  01 February 2011

Masato Ohmukai
Affiliation:
Department of Electrical and Computer Engineering, Akashi College of Technology, Hyogo, 674–8501, Japan, e-mail: ohmukai@akashi.ac.jp
Hirokazu Shimizu
Affiliation:
Department of Electrical and Computer Engineering, Akashi College of Technology, Hyogo, 674–8501, Japan, e-mail: ohmukai@akashi.ac.jp
Yasuo Tsutsumi
Affiliation:
Department of Electrical and Computer Engineering, Akashi College of Technology, Hyogo, 674–8501, Japan, e-mail: ohmukai@akashi.ac.jp
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Abstract

Porous silicon (PS), well known as a visible luminescent material, has been revealed to be an attractive candidate for an ultrasonic emitter recently. Since the ultrasonic emission is based on a thermal process it is important to evaluate thermal properties of PS. We then evaluated the thermal conductivity of PS from the phase delay in a photoacoustic (PA) signal. We report the dependence of thermal conductivity on anodization time in forming PS.

Type
Research Article
Copyright
Copyright © Materials Research Society 2005

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References

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Thermal Conductivity of Porous Silicon Evaluated from Phase Characteristics of Photoacoustic Spectroscopy
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