Hostname: page-component-77c89778f8-m8s7h Total loading time: 0 Render date: 2024-07-17T08:50:07.832Z Has data issue: false hasContentIssue false
  • English
  • Français

Thermal Conductivity of Aluminum Nitride Thin Films

Published online by Cambridge University Press:  25 February 2011

L. J. Shaw-Klein ,
S. J. Burns  and
S. D. Jacobs
L. J. Shaw-Klein
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
S. J. Burns
Affiliation:
Materials Science Program, Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
S. D. Jacobs
Affiliation:
Laboratory for Laser Energetics, University of Rochester, Rochester, NY 14623
Get access

Abstract

Anomalously low laser damage resistance thresholds have been observed in many thin film systems. Thermal conductivity values well below bulk have been suggested as a possible cause. A series of reactively sputtered AIN films were deposited on fused quartz and sapphire substrates. Their thermal conductivities were measured using the thermal comparator technique. Important factors contributing to the apparently large thermal resistance in the AIN films include film surfaces, small grain size, and high oxygen concentration. Preferred orientation and columnar morphology also affect film conductivity. Film microstructures were observed by transmission electron microscopy, and correlated with measured values of thermal conductivity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 203: Symposium D – Electronic Packaging Materials Science V , 1990 , 235
Copyright
Copyright © Materials Research Society 1991

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Slack, G. A., Tanzilli, R. A., Pohl, R. O. and Vandersande, J. W., J. Phys. Chem. Solids 48, 641, (1987).Google Scholar
[2] Virkar, A. V., Jackson, T. B. and Cutler, R. A., J. Am. Ceram. Soc. 72, 2031, (1989).Google Scholar
[3] Hatwar, T. K., Shin, S. C. and Stinson, D. G., IEEE Trans. Magnetics MAG–22, 946, (1986).Google Scholar
[4] Krishnaswamy, S. V., Heister, W. A., Szedon, J. R., Francombe, M. H. and Driscoll, M. M., Thin Sol. Films 125, 291, (1985).Google Scholar
[5] Dinwiddie, R. B. and Onn, D. G., in Advanced Electronic Packaging Materials, edited by Barfknecht, A. F., Partridge, J. P., Chen, C. J. and Li, C.-Y. (Mat. Res. Soc. 167, Pittsburgh, PA 1990), pp. 241–246.Google Scholar
[6] Guenther, A. H. and McIver, J. K. Laser and Particle Beams, 7, 433, (1989).Google Scholar
[7] Klemens, P. G., in Solid State Physics, edited by Seitz, F. and Turnbull, D. (Academic Press Inc. 7, New York 1958), pp. 1–98.Google Scholar
[8] Thornton, J. A., SPIE Proc. Modeling of Optical Thin Films 821, 95, (1987).Google Scholar
[9] Lambropoulos, J. C., Jolly, M. R., Amsden, C. A., Gilman, S. E., Sinicropi, M. J., Diakomihalis, D. and Jacobs, S. D., J. Appl. Phys. 66, 4320, (1989).Google Scholar
[10] Abeles, B., Phys. Rev. 131, 1906, (1963).Google Scholar
[11] Harris, J. H., Youngman, R. A. and Teller, R. G., J. Mater. Res. 5, 1763, (1990).Google Scholar